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    Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

    TitleStudy of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors
    Publication TypeJournal Article
    Año de publicación2010
    AutoresRedondo, A, Gago, R, Romero, MF, Jiménez, A
    Idioma de publicaciónEnglish
    Journalphysica status solidi
    Volumen5
    Número2
    Páginas518-521
    Fecha de publicaciónenero 2008
    ISSN2008.915568
    DOI10.1002/pssc.200777473

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